The hypothesis is that the formation of gallium oxide nanowires will occur at temperatures above 900°C.

You will coat a silicon wafer with a nickel nitrate solution, place it in an aluminum tube furnace, fill the tube with argon gas, and increase the temperature of the furnace at a rate of 17°C per minute.

You will need 6 gallium beads, an aluminum tube furnace, a cylinder of argon gas, 6 pieces of silicon wafer, a Ni(NO3)2 solution, a beaker of water, a ceramic plate, a vacuum pump, and an electron microscope.

The results showed that gallium oxide nanowires only form at temperatures above 920°C, disproving the hypothesis.

This science project is interesting because it explores the effect of temperature on the formation of nanowires, which are tiny structures with potential applications in producing tiny components and circuits.

Variations of this experiment include using zinc oxide to produce zinc oxide nanowires.

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